Improved Linearity CMOS Active Resistor Structure Using Computational Circuits

A new low-power low-voltage active resistor structure with improved performances will be presented. The problem of circuit linearity is solved by implementing an original technique, using a proper current biasing of the differential core, while the existing solutions allow only a partial improvement of the circuit performances. The structures are implemented in m 35 . 0  CMOS technology and are supplied at V 3  . The circuits present a very good linearity (in the worst case, total order distortions % 4 . 0  ), correlated with an extended range of the input voltage (at least V 5 . 0  ). The tuning range of the active resistors is about hundreds  k  M . Keywords-Linearity; active resistor circuit; computational circuits; VLSI design.